AGM15P30E MOSFET Datasheet: P-Ch, 15V, 4.1A. Full specification with pinout and replacement list

AGM15P30E Specs and Replacement

Type Designator: AGM15P30E

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 304 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOT23

AGM15P30E substitution

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AGM15P30E datasheet

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AGM15P30E General Description Product Summary The AGM15P30E combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID protection This device is ideal for load switch and battery applications. -15V 34m -4.1A Features Advance high cell density Trench technology SOT-23-3 Pin Configuration Low R to minimize... See More ⇒

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AGM15P30AS Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -15 -18 -- V GS D Zero Gate Voltage Drain Current V =-15V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 10V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltag... See More ⇒

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AGM15P13E Characteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) D Typ. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =-5A; D GS DS(on) j D V =10V GS www.agm-mos.com 3 VER2.6 AGM15P13E Gate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA V =f(T ); I =-250uA ... See More ⇒

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AGM15P22AS Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -16 -- -- V GS D Zero Gate Voltage Drain Current V =-16V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 10V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage... See More ⇒