AGM310MAP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM310MAPTable 3. N- Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold V

AGM310MAN Channel characteristics curveFig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics1.2501V =10V GS0.8V =4.5V GS250.60.40.200 0.5 1 1.5 20Drain-Source voltage (V)0 50 100 150 200Temperature (C)Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current 2.52021.51010.500-5

AGM310MARTable 3. N- Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold V

AGM310M General DescriptionProduct SummaryThe AGM310M combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery 30V 12m 12Aprotection applications.-30V 16m -12A FeaturesSOP8 Pin Configuration Advance high cell density Trench technologyR to minimi

AGM310MDTable 3. N- Channel Electrical Characteristics (Tj=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold Vo