AGM310MAP Specs and Replacement
Type Designator: AGM310MAP
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20(18) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11(18) nS
Cossⓘ - Output Capacitance: 114(142) pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017(0.023) Ohm
Package: PDFN3.3X3.3
AGM310MAP substitution
- MOSFET ⓘ Cross-Reference Search
AGM310MAP datasheet
agm310map.pdf
AGM310MAP Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold V... See More ⇒
agm310ma.pdf
AGM310MA N Channel characteristics curve Fig.1 Power Dissipation Derating Curve Fig.2 Typical output Characteristics 1.2 50 1 V =10V GS 0.8 V =4.5V GS 25 0.6 0.4 0.2 0 0 0.5 1 1.5 2 0 Drain-Source voltage (V) 0 50 100 150 200 Temperature ( C) Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current 2.5 20 2 1.5 10 1 0.5 0 0 -5... See More ⇒
agm310mar.pdf
AGM310MAR Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold V... See More ⇒
agm310m.pdf
AGM310M General Description Product Summary The AGM310M combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery 30V 12m 12A protection applications. -30V 16m -12A Features SOP8 Pin Configuration Advance high cell density Trench technology R to minimi... See More ⇒
Detailed specifications: AGM30P20D, AGM30P20M, AGM310A, AGM310AP1, AGM310AS, AGM310D, AGM310M, AGM310MA, IRFZ24N, AGM310MAR, AGM310MD, AGM311MAP, AGM311MN, AGM312AP, AGM312D, AGM20P30AP, AGM20P30AP1
Keywords - AGM310MAP MOSFET specs
AGM310MAP cross reference
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AGM310MAP replacement
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