AGM312AP Todos los transistores

 ..1. Size:887K  cn agmsemi
 agm312ap.pdf

AGM312AP CHARACTERISTICS CURVES (TC = 25 C unless otherwise noted) Continuous Drain Current vs. TC Normalized RDS(ON) vs. TJ TJ, Junction Temperature ( C) TC, Case Temperature ( C) Normalized Vth vs. TJ Gate Charge Qg, Gate Charge (nC) TJ, Junction Temperature ( C) Normalized Transient Impedance Maximum Safe Operation Area VDS, Drain to Source Voltage (V) Square Wa

 8.1. Size:1449K  cn agmsemi
 agm312map.pdf

AGM312MAP Table 3. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -30 -- -- V Zero Gate Voltage Drain Current V =-24V,V =0V -1 DS GS I -- -- A DSS Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- nA GSS V Gate Threshold Voltage V =

 8.2. Size:1126K  cn agmsemi
 agm312m2.pdf

AGM312M2 General Description Product Summary The AGM312M2 combines advanced trench MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 30V 18m 9A protection applications. -30V 37m -6.8A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R t

 8.3. Size:932K  cn agmsemi
 agm312d.pdf

AGM312D General Description The AGM312D combines advanced trench MOSFET Product Summary to provide technology with a low resistance package extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 30V 14m 20A Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize

 8.4. Size:1006K  cn agmsemi
 agm312m1.pdf

AGM312M1 General Description Product Summary The AGM312M1 combines advanced trench MOSFET technology with a low resistance BVDSS RDSON ID to provide extremely low R . package DS(ON) 30V 12m 9.0A This device is ideal for load switch and battery -30V 30m -7.2A protection applications. Features SOP-8 Pin Configuration Advance high cell density Trench technology Low

 8.5. Size:2273K  cn agmsemi
 agm312me.pdf

AGM312ME Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current -- -- nA I V = 12V,V =0V GSS GS DS 100 V Gate Threshold Voltage