AGM312AP Datasheet and Replacement

AGM312APCHARACTERISTICS CURVES (TC = 25C unless otherwise noted) Continuous Drain Current vs. TC Normalized RDS(ON) vs. TJ TJ, Junction Temperature (C) TC, Case Temperature (C) Normalized Vth vs. TJ Gate Charge Qg, Gate Charge (nC) TJ, Junction Temperature (C) Normalized Transient Impedance Maximum Safe Operation Area VDS, Drain to Source Voltage (V) Square Wa

AGM312MAPTable 3. P-Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250A -30 ---- VZero Gate Voltage Drain Current V =-24V,V =0V -1DS GSI -- -- ADSSGate-Body Leakage Current V =20V,V =0V 100GS DSI -- -- nAGSSV Gate Threshold Voltage V =

AGM312M2 General DescriptionProduct SummaryThe AGM312M2 combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R .package DS(ON)BVDSS RDSON IDThis device isideal for load switch and battery30V 18m 9Aprotection applications.-30V 37m -6.8A Features Advance high cell density Trench technologySOP8 Pin ConfigurationLow R t

AGM312D General DescriptionThe AGM312D combines advanced trench MOSFETProduct Summaryto providetechnology with a low resistance packageextremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features30V 14m 20AAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to minimize

AGM312M1 General DescriptionProduct SummaryThe AGM312M1 combines advanced trenchMOSFET technology with a low resistanceBVDSS RDSON IDto provide extremely low R .package DS(ON)30V 12m 9.0AThis device isideal for load switch and battery-30V 30m -7.2Aprotection applications. FeaturesSOP-8 Pin Configuration Advance high cell density Trench technologyLow

AGM312METable 3. N- Channel Electrical Characteristics (TJ=25unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current -- -- nAI V =12V,V =0VGSS GS DS100V Gate Threshold Voltage