AGM30P20AP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AGM30P20AP
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 94 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
Paquete / Cubierta: PDFN3.3X3.3
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AGM30P20AP Datasheet (PDF)
agm30p20ap.pdf
AGM30P20APCharacteristics Curvewww.agm-mos.com 3 VER2.68AGM30P20APFigure7 Safe Operation AreaFigure8 Normalized Maximum Transient Thermal Impedancewww.agm-mos.com 4 VER2.68AGM30P20APDimensionsPDFN3.3*3.3MILLIMETERDSYMBOLMIN Typ. MAXA 0.700 0.800 0.900bA1 0.152REF.A2 0~0.05D 3.000 3.100 3.200D1 2.300 2.450 2.600D1E 2.900 3.000 3.100E1 3.1
agm30p20m.pdf
AGM30P20MCharacteristics Curve Typ. output characteristics Typ. drain-source on resistance -I =f(-V ) R =f(-I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance -I =f(-V ) R = f(T ); I =-8A; V =-10V D GS DS(on) j D GSwww.agm-mos.com 3 VER2.7AGM30P20MGate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA -V =f(T ); I =-2
agm30p20d.pdf
AGM30P20DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -30 -- -- VGS DZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage
agm30p20s.pdf
AGM30P20S General DescriptionProduct SummaryThe AGM30P20S combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotectionapplications.-30V 15.5m -11A Features Advance high cell density Trench technology SOP8 Pin ConfigurationLow R to minimize co
Otros transistores... AGM30P12D , AGM30P12M , AGM30P14MBP , AGM30P16AP , AGM30P16D , AGM30P16S , AGM30P18E , AGM30P18S , IRF640 , , , , , , , , .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AGM30P20AP | AGM30P18S | AGM30P18E | AGM30P16S | AGM30P16D | AGM30P16AP | AGM30P14MBP | AGM30P12M | AGM30P12D | AGM30P110D | AGM30P110A | AGM30P10SR | AGM30P10S | AGM30P10K | AGM30P10AP | AGM25N15C
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