AGM30P20AP - Даташиты. Аналоги. Основные параметры

AGM30P20APCharacteristics Curvewww.agm-mos.com 3 VER2.68AGM30P20APFigure7 Safe Operation AreaFigure8 Normalized Maximum Transient Thermal Impedancewww.agm-mos.com 4 VER2.68AGM30P20APDimensionsPDFN3.3*3.3MILLIMETERDSYMBOLMIN Typ. MAXA 0.700 0.800 0.900bA1 0.152REF.A2 0~0.05D 3.000 3.100 3.200D1 2.300 2.450 2.600D1E 2.900 3.000 3.100E1 3.1

AGM30P20MCharacteristics Curve Typ. output characteristics Typ. drain-source on resistance -I =f(-V ) R =f(-I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance -I =f(-V ) R = f(T ); I =-8A; V =-10V D GS DS(on) j D GSwww.agm-mos.com 3 VER2.7AGM30P20MGate Threshold Voltage Drain-source breakdown voltage -V =f(T ); I =-250uA -V =f(T ); I =-2

AGM30P20DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -30 -- -- VGS DZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM30P20S General DescriptionProduct SummaryThe AGM30P20S combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotectionapplications.-30V 15.5m -11A Features Advance high cell density Trench technology SOP8 Pin ConfigurationLow R to minimize co