DMN5L06DWK Todos los transistores

 

DMN5L06DWK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN5L06DWK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.305 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: SOT363

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DMN5L06DWK Datasheet (PDF)

 ..1. Size:367K  diodes
dmn5l06dwk.pdf

DMN5L06DWK
DMN5L06DWK

DMN5L06DWKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance (1.0V max) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capac

 5.1. Size:243K  diodes
dmn5l06dw.pdf

DMN5L06DWK
DMN5L06DWK

DMN5L06DWDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Ter

 6.1. Size:270K  diodes
dmn5l06dmk.pdf

DMN5L06DWK
DMN5L06DWK

DMN5L06DMKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage (1.0V max) Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capaci

 6.2. Size:575K  diodes
dmn5l06dmkq.pdf

DMN5L06DWK
DMN5L06DWK

DMN5L06DMKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features ID max Low On-Resistance BVDSS RDS(ON) max TA = +25C Very Low Gate Threshold Voltage Low Input Capacitance 2.0 @ VGS = 5V 305mA Fast Switching Speed 50V 2.5 @ VGS = 2.5V 280mA Low Input/Output Leakage 3.0 @ VGS = 1.8V 265mA ESD Protected up to

Otros transistores... DMN4031SSD , DMN4034SSD , DMN4034SSS , DMN4036LK3 , DMN4040SK3 , DMN5010VAK , DMN55D0UT , DMN5L06DMK , IRFP250N , DMN5L06K , DMN5L06TK , DMN5L06VAK , DMN5L06VK , DMN5L06WK , DMN601DMK , DMN601DWK , DMN601K .

 

 
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