DMN5L06DWK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMN5L06DWK

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.305 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm

Encapsulados: SOT363

 Búsqueda de reemplazo de DMN5L06DWK MOSFET

- Selecciónⓘ de transistores por parámetros

 

DMN5L06DWK datasheet

 ..1. Size:367K  diodes
 dmn5l06dwk.pdf pdf_icon

DMN5L06DWK

DMN5L06DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-363 Low On-Resistance (1.0V max) Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020C Low Input Capac

 5.1. Size:243K  diodes
 dmn5l06dw.pdf pdf_icon

DMN5L06DWK

DMN5L06DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-363 Low On-Resistance Case Material Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020C Low Input Capacitance Ter

 6.1. Size:270K  diodes
 dmn5l06dmk.pdf pdf_icon

DMN5L06DWK

DMN5L06DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-26 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage (1.0V max) Moisture Sensitivity Level 1 per J-STD-020C Low Input Capaci

 6.2. Size:575K  diodes
 dmn5l06dmkq.pdf pdf_icon

DMN5L06DWK

DMN5L06DMKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features ID max Low On-Resistance BVDSS RDS(ON) max TA = +25 C Very Low Gate Threshold Voltage Low Input Capacitance 2.0 @ VGS = 5V 305mA Fast Switching Speed 50V 2.5 @ VGS = 2.5V 280mA Low Input/Output Leakage 3.0 @ VGS = 1.8V 265mA ESD Protected up to

MOSTRAR MÁS

Otros transistores... DMN4031SSD, DMN4034SSD, DMN4034SSS, DMN4036LK3, DMN4040SK3, DMN5010VAK, DMN55D0UT, DMN5L06DMK, STP75NF75, DMN5L06K, DMN5L06TK, DMN5L06VAK, DMN5L06VK, DMN5L06WK, DMN601DMK, DMN601DWK, DMN601K