DMN5L06DWK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMN5L06DWK Datasheet (PDF)

..1. Size:367K diodes
dmn5l06dwk.pdf pdf_icon

DMN5L06DWKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance (1.0V max) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capac

5.1. Size:243K diodes
dmn5l06dw.pdf pdf_icon

DMN5L06DWDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Ter

6.1. Size:270K diodes
dmn5l06dmk.pdf pdf_icon

DMN5L06DMKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage (1.0V max) Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capaci

6.2. Size:575K diodes
dmn5l06dmkq.pdf pdf_icon

DMN5L06DMKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features ID max Low On-Resistance BVDSS RDS(ON) max TA = +25C Very Low Gate Threshold Voltage Low Input Capacitance 2.0 @ VGS = 5V 305mA Fast Switching Speed 50V 2.5 @ VGS = 2.5V 280mA Low Input/Output Leakage 3.0 @ VGS = 1.8V 265mA ESD Protected up to

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .