AGMH614H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGMH614H Datasheet (PDF)

..1. Size:750K cn agmsemi
agmh614h.pdf pdf_icon

AGMH614H General DescriptionProduct SummaryThe AGMH614H combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and batteryprotection applications.60V 11m50A FeaturesAdvance high cell density Trench technology TO-263 Pin Configuration Low R to minimize

7.1. Size:768K cn agmsemi
agmh614d.pdf pdf_icon

AGMH614D General DescriptionProduct SummaryThe AGMH614D combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and batteryprotection applications.60V 11m50A FeaturesAdvance high cell density Trench technology TO-252 Pin Configuration Low R to minimize

7.2. Size:1014K cn agmsemi
agmh614c.pdf pdf_icon

AGMH614CTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,

8.1. Size:1307K cn agmsemi
agmh612d.pdf pdf_icon

AGMH612DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,

Otros transistores... AGMH403A1 , AGMH605C , AGMH606C , AGMH606H , AGMH6080H , AGMH612D , AGMH614C , AGMH614D , K4145 , AGMH70N70C , AGMH70N70D , AGMH70N90C , AGMH70N90H , AGML315ME , AGMS5N50D , , .