AGMH614H MOSFET Datasheet: N-Ch, 60V, 50A. Full specification with pinout and replacement list

AGMH614H Specs and Replacement

Type Designator: AGMH614H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 66 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 119 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO263

AGMH614H substitution

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AGMH614H datasheet

..1. Size:750K cn agmsemi
agmh614h.pdf pdf_icon

AGMH614H General Description Product Summary The AGMH614H combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 11m 50A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to minimize... See More ⇒

7.1. Size:768K cn agmsemi
agmh614d.pdf pdf_icon

AGMH614D General Description Product Summary The AGMH614D combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 11m 50A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize... See More ⇒

7.2. Size:1014K cn agmsemi
agmh614c.pdf pdf_icon

AGMH614C Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,... See More ⇒

8.1. Size:1307K cn agmsemi
agmh612d.pdf pdf_icon

AGMH612D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,... See More ⇒

Detailed specifications: AGMH403A1, AGMH605C, AGMH606C, AGMH606H, AGMH6080H, AGMH612D, AGMH614C, AGMH614D, IRF9540N, AGMH70N70C, AGMH70N70D, AGMH70N90C, AGMH70N90H, AGML315ME, AGMS5N50D, AGM308MN, AGM308S