All MOSFET. AGMH614H Datasheet

 

AGMH614H Datasheet and Replacement


   Type Designator: AGMH614H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 119 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO263
 

 AGMH614H substitution

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AGMH614H Datasheet (PDF)

 ..1. Size:750K  cn agmsemi
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AGMH614H

AGMH614H General DescriptionProduct SummaryThe AGMH614H combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and batteryprotection applications.60V 11m50A FeaturesAdvance high cell density Trench technology TO-263 Pin Configuration Low R to minimize

 7.1. Size:768K  cn agmsemi
agmh614d.pdf pdf_icon

AGMH614H

AGMH614D General DescriptionProduct SummaryThe AGMH614D combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and batteryprotection applications.60V 11m50A FeaturesAdvance high cell density Trench technology TO-252 Pin Configuration Low R to minimize

 7.2. Size:1014K  cn agmsemi
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AGMH614H

AGMH614CTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,

 8.1. Size:1307K  cn agmsemi
agmh612d.pdf pdf_icon

AGMH614H

AGMH612DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,

Datasheet: AGMH403A1 , AGMH605C , AGMH606C , AGMH606H , AGMH6080H , AGMH612D , AGMH614C , AGMH614D , K4145 , AGMH70N70C , AGMH70N70D , AGMH70N90C , AGMH70N90H , AGML315ME , AGMS5N50D , , .

Keywords - AGMH614H MOSFET datasheet

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