AGM30P08D Todos los transistores

 

AGM30P08D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGM30P08D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de AGM30P08D MOSFET

   - Selección ⓘ de transistores por parámetros

 

AGM30P08D Datasheet (PDF)

 ..1. Size:1968K  cn agmsemi
 agm30p08d.pdf pdf_icon

AGM30P08D

AGM30P08DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A -30 -- -- VGS DDSSZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1.0 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100V Gate Threshold Voltage V

 6.1. Size:1929K  cn agmsemi
 agm30p08ap.pdf pdf_icon

AGM30P08D

AGM30P08APP- Channel Typical CharacteristicsTC=25impulse=250uS-4.5V-6V-10V-3.5V25-3V-2.5 V-Vds Drain-Source Voltage (V)-Vgs Gate-Source Voltage (V)Figure 1. On-Region Characteristics Figure 2. Transfer CharacteristicsNoteTJ=25VGS= 0V25VGS= -4.5VVGS= -10V-ID - Drain Current (A) -VF ,Forward Voltage (V)Figure 3. On-Resistance Variation vs F

 6.2. Size:2125K  cn agmsemi
 agm30p08a.pdf pdf_icon

AGM30P08D

AGM30P08A General DescriptionThe AGM30P08A combines advanced trenchProduct SummaryMOSFET technology with a low resistanceto provide extremely low R .package DS(ON)BVDSS RDSON IDThis device isideal for load switch and batteryprotection applications.-30V 7.0m -60A Features Advance high cell density Trench technology PDFN5*6 Pin ConfigurationR to minimize con

 7.1. Size:1980K  cn agmsemi
 agm30p05ap.pdf pdf_icon

AGM30P08D

AGM30P05AP General DescriptionThe AGM30P05AP combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryprotection applications.BVDSS RDSON ID Features-30V 5.5m -60AAdvance high cell density Trench technology Low R to minimize conductive lossD

MOSTRAR MÁS

Otros transistores... AGM308MN , AGM308S , AGM308SR , AGM30P05A , AGM30P05AP , AGM30P05D , AGM30P08A , AGM30P08AP , IRF1407 , AGM30P100A , AGM30P100D , AGM30P10A , AGM3400EL , AGM3401E , AGM3404E , , .

History: AGM30P100A

 

 
Back to Top

 


 
.