AGM30P08D - аналоги, даташиты, параметры транзистора

AGM30P08D Datasheet (PDF)

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AGM30P08DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A -30 -- -- VGS DDSSZero Gate Voltage Drain Current V =-30V,V =0V -- -- -1.0 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100V Gate Threshold Voltage V

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AGM30P08APP- Channel Typical CharacteristicsTC=25impulse=250uS-4.5V-6V-10V-3.5V25-3V-2.5 V-Vds Drain-Source Voltage (V)-Vgs Gate-Source Voltage (V)Figure 1. On-Region Characteristics Figure 2. Transfer CharacteristicsNoteTJ=25VGS= 0V25VGS= -4.5VVGS= -10V-ID - Drain Current (A) -VF ,Forward Voltage (V)Figure 3. On-Resistance Variation vs F

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AGM30P08A General DescriptionThe AGM30P08A combines advanced trenchProduct SummaryMOSFET technology with a low resistanceto provide extremely low R .package DS(ON)BVDSS RDSON IDThis device isideal for load switch and batteryprotection applications.-30V 7.0m -60A Features Advance high cell density Trench technology PDFN5*6 Pin ConfigurationR to minimize con

7.1. Size:1980K cn agmsemi
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AGM30P05AP General DescriptionThe AGM30P05AP combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryprotection applications.BVDSS RDSON ID Features-30V 5.5m -60AAdvance high cell density Trench technology Low R to minimize conductive lossD