AGM30P08D - аналоги, параметры транзистора - Справочник транзисторов

AGM30P08D даташит

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AGM30P08D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A -30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =-30V,V =0V -- -- -1.0 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 V Gate Threshold Voltage V

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AGM30P08AP P- Channel Typical Characteristics TC=25 impulse=250uS -4.5V -6V -10V -3.5V 25 -3V -2.5 V -Vds Drain-Source Voltage (V) -Vgs Gate-Source Voltage (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Note TJ=25 VGS= 0V 25 VGS= -4.5V VGS= -10V -ID - Drain Current (A) -VF ,Forward Voltage (V) Figure 3. On-Resistance Variation vs F

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AGM30P08A General Description The AGM30P08A combines advanced trench Product Summary MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -30V 7.0m -60A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration R to minimize con

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AGM30P05AP General Description The AGM30P05AP combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID Features -30V 5.5m -60A Advance high cell density Trench technology Low R to minimize conductive loss D