DMN601DWK Todos los transistores

 

DMN601DWK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN601DWK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.305 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: SOT363
     - Selección de transistores por parámetros

 

DMN601DWK Datasheet (PDF)

 ..1. Size:196K  diodes
dmn601dwk.pdf pdf_icon

DMN601DWK

DMN601DWKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity:

 7.1. Size:198K  diodes
dmn601dmk.pdf pdf_icon

DMN601DWK

DMN601DMKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity:

 8.1. Size:148K  diodes
dmn601wk.pdf pdf_icon

DMN601DWK

DMN601WKN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-323 Case Material: Molded Plastic, Green Molding Compound. Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per

 8.2. Size:493K  diodes
dmn6017sk3.pdf pdf_icon

DMN601DWK

DMN6017SK3 Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID Max BVDSS RDS(ON) Max Low Input Capacitance TC = +25C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 18m @ VGS = 10V 43A 60V Halogen and Antimony Free. Green Device (Note 3) 20m @ VGS = 4.5V 41A Qualified to AEC-Q101 Standards for H

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HUFA76423S3ST | FDP52N20 | P06P03LDG | HM12N20D | STB7NK80Z | NCE65TF099F

 

 
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