DMN601DWK - описание и поиск аналогов

 ..1. Size:196K  diodes
 dmn601dwk.pdf 

DMN601DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Dual N-Channel MOSFET Case SOT-363 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity

 7.1. Size:198K  diodes
 dmn601dmk.pdf 

DMN601DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Dual N-Channel MOSFET Case SOT-26 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity

 8.1. Size:148K  diodes
 dmn601wk.pdf 

DMN601WK N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance RDS(ON) Case SOT-323 Case Material Molded Plastic, Green Molding Compound. Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per

 8.2. Size:493K  diodes
 dmn6017sk3.pdf 

DMN6017SK3 Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID Max BVDSS RDS(ON) Max Low Input Capacitance TC = +25 C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 18m @ VGS = 10V 43A 60V Halogen and Antimony Free. Green Device (Note 3) 20m @ VGS = 4.5V 41A Qualified to AEC-Q101 Standards for H

 8.3. Size:322K  diodes
 dmn6013lfg.pdf 

DMN6013LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25 C 13m @ VGS = 10V 10.3A density end products 60V 18m @ VGS = 4.5V 8.8A Occupies just 33% of the board area o

 8.4. Size:286K  diodes
 dmn601vk.pdf 

DMN601VK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-563 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020C Low Input Capacitance Termi

 8.5. Size:136K  diodes
 dmn601tk.pdf 

DMN601TK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance RDS(ON) Case SOT-523 Case Material Molded Plastic, Green Molding Low Gate Threshold Voltage Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensiti

 8.6. Size:185K  diodes
 dmn601k.pdf 

DMN601K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance RDS(ON) Case SOT-23 Case Material Molded Plastic, Green Molding Low Gate Threshold Voltage Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivi

 8.7. Size:266K  inchange semiconductor
 dmn6017sk3.pdf 

isc N-Channel MOSFET Transistor DMN6017SK3 FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp