AGM401A Todos los transistores

 

AGM401A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM401A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 66 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 200 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 2301 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0011 Ohm

Encapsulados: PDFN5X6

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AGM401A datasheet

 ..1. Size:1677K  cn agmsemi
agm401a.pdf pdf_icon

AGM401A

AGM401A www.agm-mos.com 3 VER2.68 AGM401A www.agm-mos.com 5 VER2.68 AGM401A PDFN5*6 Marking Instructions Model1 Model2 www.agm-mos.com 7 VER2.68 AGM401A Disclaimer The information provided in this document is believed to be accurate and reliable. However,Shenzhen Core Control Source Electronics Technology Co., Ltd. does not assume any responsibility for the following c

 8.1. Size:1169K  cn agmsemi
agm401ll.pdf pdf_icon

AGM401A

AGM401LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 45 -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 -- V Gate Threshold Voltage V =V

 8.2. Size:1901K  cn agmsemi
agm401c.pdf pdf_icon

AGM401A

AGM401C General Description Product Summary The AGM401C combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 40V 1.2m 220A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimize

 8.3. Size:2536K  cn agmsemi
agm4012a.pdf pdf_icon

AGM401A

AGM4012A General Description Product Summary The AGM4012A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 40V 1.1m 160A protection applications. PDFN5*6 Pin Configuration Features Advance high cell density Trench technology Low R to mini

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