AGM401A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AGM401A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 66 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 200 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 2301 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0011 Ohm
Encapsulados: PDFN5X6
Búsqueda de reemplazo de AGM401A MOSFET
- Selecciónⓘ de transistores por parámetros
AGM401A datasheet
agm401a.pdf
AGM401A www.agm-mos.com 3 VER2.68 AGM401A www.agm-mos.com 5 VER2.68 AGM401A PDFN5*6 Marking Instructions Model1 Model2 www.agm-mos.com 7 VER2.68 AGM401A Disclaimer The information provided in this document is believed to be accurate and reliable. However,Shenzhen Core Control Source Electronics Technology Co., Ltd. does not assume any responsibility for the following c
agm401ll.pdf
AGM401LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 45 -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 -- V Gate Threshold Voltage V =V
agm401c.pdf
AGM401C General Description Product Summary The AGM401C combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 40V 1.2m 220A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimize
agm4012a.pdf
AGM4012A General Description Product Summary The AGM4012A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 40V 1.1m 160A protection applications. PDFN5*6 Pin Configuration Features Advance high cell density Trench technology Low R to mini
Otros transistores... AGM3415E , AGM3416E , AGM3416EL , AGM4005LL , AGM4005LLM1 , AGM4008LL , AGM4012A , AGM4018S , STP65NF06 , AGM401C , AGM401LL , AGM4025A , AGM4025D , AGM628M , AGM628MAP , AGM628MD , AGM628MN .
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