AGM401A - описание и поиск аналогов

AGM401A www.agm-mos.com 3 VER2.68 AGM401A www.agm-mos.com 5 VER2.68 AGM401A PDFN5*6 Marking Instructions Model1 Model2 www.agm-mos.com 7 VER2.68 AGM401A Disclaimer The information provided in this document is believed to be accurate and reliable. However,Shenzhen Core Control Source Electronics Technology Co., Ltd. does not assume any responsibility for the following c

AGM401LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 45 -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 -- V Gate Threshold Voltage V =V

AGM401C General Description Product Summary The AGM401C combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 40V 1.2m 220A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimize

AGM4012A General Description Product Summary The AGM4012A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 40V 1.1m 160A protection applications. PDFN5*6 Pin Configuration Features Advance high cell density Trench technology Low R to mini

AGM4018S Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 48 -- -- V GS D Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =-