AGM403A1-KU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM403A1-KU Datasheet (PDF)

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AGM403A1-KU General DescriptionProduct SummaryThe AGM403A1-KU combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.40V 2.7m 120A FeaturesAdvance high cell density Trench technologyPDFN5*6 Pin ConfigurationLow R t

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AGM403A1Table 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage V

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AGM403APN-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.81.81.41.41.010.6 0.60.2 0.2-50 0 50 100 150 -50 0 50 100 150TJ ,Junction Temperature ( ) TJ , Junction Temperature ()Fig.5 Normalized V vs T Fig.6 Normalized R vs T

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AGM403QN-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.81.81.41.41.010.60.60.2 0.2-50 0 50 100 150 -50 0 50 100 150TJ ,Junction Temperature ( ) TJ , Junction Temperature ()Fig.5 Normalized V vs T Fig.6 Normalized R vs T