AGM403A1-KU - Даташиты. Аналоги. Основные параметры

AGM403A1-KU General DescriptionProduct SummaryThe AGM403A1-KU combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.40V 2.7m 120A FeaturesAdvance high cell density Trench technologyPDFN5*6 Pin ConfigurationLow R t

AGM403A1Table 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage V

AGM403APN-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.81.81.41.41.010.6 0.60.2 0.2-50 0 50 100 150 -50 0 50 100 150TJ ,Junction Temperature ( ) TJ , Junction Temperature ()Fig.5 Normalized V vs T Fig.6 Normalized R vs T

AGM403QN-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.81.81.41.41.010.60.60.2 0.2-50 0 50 100 150 -50 0 50 100 150TJ ,Junction Temperature ( ) TJ , Junction Temperature ()Fig.5 Normalized V vs T Fig.6 Normalized R vs T

AGM403D1 General DescriptionProduct SummaryThe AGM403D1 combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.40V 2.7m 120A FeaturesAdvance high cell density Trench technologyTO-252 Pin ConfigurationLow R to minim

AGM403DG General DescriptionProduct SummaryThe AGM403DG combines advanced trench MOSFETtotechnology with a low resistance package provideextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal load switch and battery protectionforapplications.40V 3.0m101A FeaturesAdvance high cell density Trench technologyTO-252 Pin ConfigurationLow R to min