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AGM614D General Description Product Summary The AGM614D combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 10m 53A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize c

AGM614MN Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A GS D 60 -- -- V Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- GS DS nA I GSS 100 VGS(th) Gate Threshold Voltage V

AGM614MBP Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized V vs T Fig.6 Normalized R vs T GS(th) J DSON J www.agm-mos.com 3 VER2.66 AGM614MBP Fig.7 Capacitance Fig.8 Safe Operating Area 1 DUTY=0.5 0.2 0.1 0.1 0.05 PDM TON 0.02 T 0

AGM614MNA Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I

AGM614A-G Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V

AGM614MBP-M1 Electrical characteristics diagrams Fig.1 Typ. transfer characteristics Fig.2 Typ. output characteristics 80 80 VDS=5V 10V 8V 7V 60 60 6V 40 40 5.5V 20 150 20 5V 25 -55 VGS=4.5V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 V (V) V (V) GS DS Fig.3 Normalized on-resistance vs drain current Fig.4 Typ. on-resistance vs gate-source voltage 50 5 ID=30A 40 4