AGM614D PDF and Equivalents Search

 

AGM614D Specs and Replacement

Type Designator: AGM614D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 53 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.1 nS

Cossⓘ - Output Capacitance: 78 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO252

AGM614D substitution

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AGM614D datasheet

 ..1. Size:839K  cn agmsemi
agm614d.pdf pdf_icon

AGM614D

AGM614D General Description Product Summary The AGM614D combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 10m 53A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize c... See More ⇒

 8.1. Size:964K  cn agmsemi
agm614mn.pdf pdf_icon

AGM614D

AGM614MN Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A GS D 60 -- -- V Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- GS DS nA I GSS 100 VGS(th) Gate Threshold Voltage V ... See More ⇒

 8.2. Size:997K  cn agmsemi
agm614mbp.pdf pdf_icon

AGM614D

AGM614MBP Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized V vs T Fig.6 Normalized R vs T GS(th) J DSON J www.agm-mos.com 3 VER2.66 AGM614MBP Fig.7 Capacitance Fig.8 Safe Operating Area 1 DUTY=0.5 0.2 0.1 0.1 0.05 PDM TON 0.02 T 0... See More ⇒

 8.3. Size:1226K  cn agmsemi
agm614mna.pdf pdf_icon

AGM614D

AGM614MNA Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I... See More ⇒

Detailed specifications: AGM612AP, AGM612D, AGM612MBP, AGM612MBQ, AGM612MN, AGM612MNA, AGM612S, AGM614A-G, 8205A, AGM614MBP, AGM614MBP-M1, AGM614MN, AGM614MNA, AGM615D, AGM615MN, AGM615MNA, FTP16N06A

Keywords - AGM614D MOSFET specs

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