HYG043N10NS2P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HYG043N10NS2P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 258.6 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 164 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 84 nS
Cossⓘ - Capacitancia de salida: 2234 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de HYG043N10NS2P MOSFET
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HYG043N10NS2P datasheet
hyg043n10ns2p hyg043n10ns2b.pdf
Microelectronics HYG043N10NS2P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/164A RDS(ON)= 3.5 m (typ.) @VGS = 10V 100% Avalanche Tested 100% DVDS G D S Reliable and Rugged D S G Halogen Free and Green Devices Available TO-220FB-3L TO-263-2L (RoHS Compliant) Applications Battery Management System Controller Sin
hyg045n03la1c1.pdf
HYG045N03LA1C1 N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/50A RDS(ON)=3.9 m (typ.) @VGS = 10V RDS(ON)=5.2 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available Pin1 (RoHS Compliant) Applications Switching Application Battery Protection Single N-Channel MOSFET Ordering and Marking Info
hyg045n03la1c2.pdf
HYG045N03LA1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/78A D D D D D D D D RDS(ON)= 3.6 m (typ.) @VGS = 10V RDS(ON)= 4.8 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G PDFN8L(5x6) Applications Load Switch Lithium battery protect board Single N-Channel MOSFET O
hyg042n10ns1p hyg042n10ns1b.pdf
HYG042N10NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/160A RDS(ON)=3.5m (typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application DC-DC Converters N-Channel MOSFET Ordering and Marking Information
Otros transistores... AGM614MBP-M1 , AGM614MN , AGM614MNA , AGM615D , AGM615MN , AGM615MNA , FTP16N06A , HCA60R070F , IRF4905 , HYG043N10NS2B , RM150N100HD , SLB40N26C , SLI40N26C , AGM404D , AGM404Q , AGM405A , AGM405AP1 .
History: WMM80R350S | IRLU3636PBF | AOD2606
History: WMM80R350S | IRLU3636PBF | AOD2606
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