AGM404D Todos los transistores

AGM404D GM General Description Product Summary The AGM404D combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 40V 4.5m 82A protection applications. TO-252 Pin Configuration Features Advance high cell density Trench technology Low R to mini

AGM404A Typical Performance Characteristics Figure 2 Typical Transfer Characteristics Figure1 Output Characteristics ID (A) ID (A) 120 120 10V 100 100 4.5V 4V 80 80 60 60 3.5V 40 40 125 25 20 20 VGS=3V VDS(V) VGS(V) 0 0 0 1.0 2.0 3.0 4.0 5.0 0 2 4 6 8 10 Figure 4 Body Diode Characteristics Figure 3 On-resistance vs. Drain Current IS(A) RDS(ON) (m )

AGM404Q Electrical Characteristics Diagrams 100 50 VGS = 6 V VDS = 5 V 90 VGS = 4.5 V 80 40 VGS = 4 V 70 VGS = 10 V 60 30 VGS = 3.5 V 50 40 20 30 125 25 VGS = 3 V 20 10 10 0 0 0 0.5 1 1.5 2 0 1 2 3 4 5 6 VGS (V) VDS (V) Figure 2 Transfer Characteristics Figure 1 On-Region Characteristics 10 2.1 9 1.9 VGS = 4.5 V VGS = 10 V 8 1.7 ID = 20 A 7 1.5 6 1

AGM404AP1 General Description Product Summary The AGM404AP1 combines advanced trench MOSFET to technology with a low resistance package provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal load switch and battery protection for 40V 4.4m 46A applications. Features PDFN3.3*3.3 Pin Configuration Advance high cell density Trench technology Low R to