DMN6066SSS Todos los transistores

 ..1. Size:678K  diodes
 dmn6066sss.pdf

A Product Line of Diodes Incorporated DMN6066SSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 66m @ VGS= 10V 5.0A Qualified to AEC-Q101 Standards for High Reliability 60V 97m @ VGS= 4.5V 4.1A Mechani

 5.1. Size:706K  diodes
 dmn6066ssd.pdf

A Product Line of Diodes Incorporated DMN6066SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 66m @ VGS= 10V 4.4A Qualified to AEC-Q101 Standards for High Reliability 60V 97m @ VGS= 4.5V 3.6A Me

 8.1. Size:667K  diodes
 dmn6068lk3.pdf

A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) Low on-resistance TA = 25 C Fast switching speed 68m @ VGS= 10V 8.5A Green component and RoHS compliant (Note 1) 60V Qualified to AEC-Q101 Stan

 8.2. Size:624K  diodes
 dmn6068se.pdf

A Product Line of Diodes Incorporated DMN6068SE 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) Low on-resistance TA = 25 C Fast switching speed 68m @ VGS= 10V 5.6A Green component and RoHS compliant (Note 1) 60V Qualified to AEC-Q101 Stan

 8.3. Size:317K  diodes
 dmn6069se.pdf

DMN6069SE 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) test in production ID Fast switching speed V(BR)DSS RDS(ON) max TA = +25 C Low on-resistance 69m @ VGS = 10V 4.3A Lead-Free Finish; RoHS compliant (Notes 1 & 2) 60V 100m @ VGS = 4.5V 3.5A Halogen and Antimony Free. Green Device (

 8.4. Size:885K  cn vbsemi
 dmn6068se-13.pdf

DMN6068SE-13 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs 60 0.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSF

 8.5. Size:892K  cn vbsemi
 dmn6068lk3-13.pdf

DMN6068LK3-13 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters

 8.6. Size:266K  inchange semiconductor
 dmn6068lk3.pdf

isc N-Channel MOSFET Transistor DMN6068LK3 FEATURES Drain Current I = 8.5A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 68m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur