DMN6066SSS
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN6066SSS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 5
A
Qgⓘ - Total Gate Charge: 5.4
nC
Cossⓘ -
Output Capacitance: 502
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.097
Ohm
Package:
SO8
DMN6066SSS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN6066SSS
Datasheet (PDF)
..1. Size:678K diodes
dmn6066sss.pdf 
A Product Line ofDiodes IncorporatedDMN6066SSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 66m @ VGS= 10V 5.0A Qualified to AEC-Q101 Standards for High Reliability 60V 97m @ VGS= 4.5V 4.1A Mechani
5.1. Size:706K diodes
dmn6066ssd.pdf
A Product Line ofDiodes IncorporatedDMN6066SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 66m @ VGS= 10V 4.4A Qualified to AEC-Q101 Standards for High Reliability 60V 97m @ VGS= 4.5V 3.6A Me
8.1. Size:667K diodes
dmn6068lk3.pdf
A Product Line ofDiodes IncorporatedDMN6068LK360V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) Low on-resistance TA = 25C Fast switching speed 68m @ VGS= 10V 8.5A Green component and RoHS compliant (Note 1) 60V Qualified to AEC-Q101 Stan
8.2. Size:624K diodes
dmn6068se.pdf
A Product Line ofDiodes IncorporatedDMN6068SE60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) Low on-resistanceTA = 25C Fast switching speed 68m @ VGS= 10V 5.6A Green component and RoHS compliant (Note 1) 60V Qualified to AEC-Q101 Stan
8.3. Size:317K diodes
dmn6069se.pdf
DMN6069SE60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) test in production ID Fast switching speed V(BR)DSS RDS(ON) max TA = +25C Low on-resistance 69m @ VGS = 10V 4.3A Lead-Free Finish; RoHS compliant (Notes 1 & 2) 60V 100m @ VGS = 4.5V 3.5A Halogen and Antimony Free. Green Device (
8.4. Size:885K cn vbsemi
dmn6068se-13.pdf
DMN6068SE-13www.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSF
8.5. Size:892K cn vbsemi
dmn6068lk3-13.pdf
DMN6068LK3-13www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters
8.6. Size:266K inchange semiconductor
dmn6068lk3.pdf
isc N-Channel MOSFET Transistor DMN6068LK3FEATURESDrain Current I = 8.5A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 68m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
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