AGM406Q Todos los transistores

 

AGM406Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM406Q

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 53 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.5 nS

Cossⓘ - Capacitancia de salida: 160 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: PDFN5X6

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AGM406Q datasheet

 ..1. Size:1267K  cn agmsemi
agm406q.pdf pdf_icon

AGM406Q

AGM406Q Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =

 8.1. Size:1712K  cn agmsemi
agm406mbq.pdf pdf_icon

AGM406Q

AGM406MBQ Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I 100 GSS V Gate Threshold Voltage V =V ,I =2

 8.2. Size:1128K  cn agmsemi
agm406mnq.pdf pdf_icon

AGM406Q

AGM406MNQ Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I

 8.3. Size:986K  cn agmsemi
agm406ap.pdf pdf_icon

AGM406Q

AGM406AP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I

Otros transistores... AGM60P40D , AGM60P85AP , AGM60P85D , AGM60P85E , AGM60P90A , AGM60P90D , AGM610M , AGM610MN , 20N50 , AGM408M , AGM408MN , AGM409A , AGM409D , AGM40P100A , AGM40P100C , AGM40P100H , AGM40P13S .

 

 

 


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