AGM406Q PDF and Equivalents Search

 

AGM406Q Specs and Replacement

Type Designator: AGM406Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 53 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: PDFN5X6

AGM406Q substitution

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AGM406Q datasheet

 ..1. Size:1267K  cn agmsemi
agm406q.pdf pdf_icon

AGM406Q

AGM406Q Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =... See More ⇒

 8.1. Size:1712K  cn agmsemi
agm406mbq.pdf pdf_icon

AGM406Q

AGM406MBQ Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I 100 GSS V Gate Threshold Voltage V =V ,I =2... See More ⇒

 8.2. Size:1128K  cn agmsemi
agm406mnq.pdf pdf_icon

AGM406Q

AGM406MNQ Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I... See More ⇒

 8.3. Size:986K  cn agmsemi
agm406ap.pdf pdf_icon

AGM406Q

AGM406AP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I ... See More ⇒

Detailed specifications: AGM60P40D, AGM60P85AP, AGM60P85D, AGM60P85E, AGM60P90A, AGM60P90D, AGM610M, AGM610MN, 20N50, AGM408M, AGM408MN, AGM409A, AGM409D, AGM40P100A, AGM40P100C, AGM40P100H, AGM40P13S

Keywords - AGM406Q MOSFET specs

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