AGM60P14AP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM60P14AP

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 52 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 99 nS

Cossⓘ - Capacitancia de salida: 175 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: PDFN3.3X3.3

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AGM60P14AP datasheet

 ..1. Size:1175K  cn agmsemi
 agm60p14ap.pdf pdf_icon

AGM60P14AP

AGM60P14AP General Description The AGM60P14AP combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R DS(ON) This device is ideal and battery for load switch BVDSS RDSON ID protection applications. Features -60V 18m -52A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to m

 5.1. Size:1316K  cn agmsemi
 agm60p14a.pdf pdf_icon

AGM60P14AP

AGM60P14A General Description The AGM60P14A combines advanced trench MOSFET Product Summary to provide technology with a low resistance package extremely low R DS(ON) This device is ideal and battery for load switch BVDSS RDSON ID protection applications. -60V 18m -52A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to minimize

 6.1. Size:904K  cn agmsemi
 agm60p14d.pdf pdf_icon

AGM60P14AP

AGM60P14D General Description Product Summary The AGM60P14D combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch -60V 18m -52A protection applications. TO-252 Pin Configuration Features Advance high cell density Trench technology Low R to minimize

 7.1. Size:1942K  cn agmsemi
 agm60p100a.pdf pdf_icon

AGM60P14AP

AGM60P100A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -60 -- -- V GS D Zero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage

MOSTRAR MÁS

Otros transistores... AGM609C, AGM609D, AGM609F, AGM609MNA, AGM609S, AGM60P06S, AGM60P100A, AGM60P14A, MMIS60R580P, AGM60P14D, AGM60P20AP, AGM60P20D, AGM60P20R, AGM40P30A, AGM40P30AP, AGM40P30D, AGM40P35A