AGM60P14AP - аналоги, даташиты, параметры транзистора

AGM60P14AP Datasheet (PDF)

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AGM60P14AP General DescriptionThe AGM60P14AP combines advanced trenchProduct SummarytoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)This device is ideal and batteryfor load switchBVDSS RDSON IDprotectionapplications. Features-60V 18m -52A Advance high cell density Trench technologyPDFN3.3*3.3 Pin ConfigurationLow R to m

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AGM60P14A General DescriptionThe AGM60P14A combines advanced trench MOSFETProduct Summaryto providetechnology with a low resistance packageextremely low RDS(ON)This device is ideal and batteryfor load switchBVDSS RDSON IDprotectionapplications.-60V 18m -52A Features Advance high cell density Trench technologyPDFN5*6 Pin ConfigurationLow R to minimize

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AGM60P14D General DescriptionProduct SummaryThe AGM60P14D combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal and batteryfor load switch-60V 18m -52Aprotectionapplications.TO-252 Pin Configuration Features Advance high cell density Trench technologyLow R to minimize

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AGM60P100ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -60 -- -- VGS DZero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

Другие MOSFET... AGM609C , AGM609D , AGM609F , AGM609MNA , AGM609S , AGM60P06S , AGM60P100A , AGM60P14A , MMIS60R580P , AGM60P14D , AGM60P20AP , AGM60P20D , AGM60P20R , , , , .