ZXMN4A06G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMN4A06G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 770 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: SOT223

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ZXMN4A06G datasheet

 ..1. Size:168K  diodes
 zxmn4a06g.pdf pdf_icon

ZXMN4A06G

ZXMN4A06G 40V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT223 Low on-resistance F

 0.1. Size:376K  diodes
 zxmn4a06gq.pdf pdf_icon

ZXMN4A06G

ZXMN4A06GQ Green 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) TA = +25 C Fast Switching Speed 40V 0.05 @ VGS = 10V 7A Low Threshold Low Gate Drive Description Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET

 0.2. Size:167K  zetex
 zxmn4a06gta.pdf pdf_icon

ZXMN4A06G

ZXMN4A06G 40V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT223 Low on-resistance F

 0.3. Size:946K  cn vbsemi
 zxmn4a06gt.pdf pdf_icon

ZXMN4A06G

ZXMN4A06GT www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs 60 0.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET

MOSTRAR MÁS

Otros transistores... DMN6066SSS, DMN6068LK3, DMN6068SE, DMN62D1SFB, DMN66D0LDW, DMN66D0LT, DMN66D0LW, ZXM64N035L3, NCEP15T14, ZXMN4A06K, ZXMN6A07F, ZXMN6A07Z, ZXMN6A08E6, ZXMN6A08G, ZXMN6A08K, ZXMN6A09DN8, ZXMN6A09G