All MOSFET. ZXMN4A06G Datasheet

 

ZXMN4A06G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMN4A06G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Qgⓘ - Total Gate Charge: 18.2 nC
   Cossⓘ - Output Capacitance: 770 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOT223

 ZXMN4A06G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN4A06G Datasheet (PDF)

 ..1. Size:168K  diodes
 zxmn4a06g.pdf

ZXMN4A06G ZXMN4A06G

ZXMN4A06G40V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT223 Low on-resistance F

 0.1. Size:376K  diodes
 zxmn4a06gq.pdf

ZXMN4A06G ZXMN4A06G

ZXMN4A06GQGreen40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) TA = +25C Fast Switching Speed 40V 0.05 @ VGS = 10V 7A Low Threshold Low Gate Drive Description Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET

 0.2. Size:167K  zetex
 zxmn4a06gta.pdf

ZXMN4A06G ZXMN4A06G

ZXMN4A06G40V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 40V; RDS(ON)= 0.05 ID= 7ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT223 Low on-resistance F

 0.3. Size:946K  cn vbsemi
 zxmn4a06gt.pdf

ZXMN4A06G ZXMN4A06G

ZXMN4A06GTwww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET

Datasheet: DMN6066SSS , DMN6068LK3 , DMN6068SE , DMN62D1SFB , DMN66D0LDW , DMN66D0LT , DMN66D0LW , ZXM64N035L3 , 13N50 , ZXMN4A06K , ZXMN6A07F , ZXMN6A07Z , ZXMN6A08E6 , ZXMN6A08G , ZXMN6A08K , ZXMN6A09DN8 , ZXMN6A09G .

 

 
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