AGM420MA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM420MA  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 44.5 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm

Encapsulados: PDFN5X6

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AGM420MA datasheet

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AGM420MA

AGM420MA P-Channel Typical Characteristics Typical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. -VGS(TH) Gate -Source Voltage Vs.Tj -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage

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 agm420map.pdf pdf_icon

AGM420MA

AGM420MAP Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold V

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 agm420md.pdf pdf_icon

AGM420MA

AGM420MD P-Channel Typical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. -VGS(TH) Gate -Source Voltage Vs.Tj -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source V

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AGM420MA

AGM420MC General Description Product Summary The AGM420MC combines advanced trench MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 40V 18m 7.6A protection applications. -40V 26m -7.5A Features Advance high cell density Trench technology SOP8 Pin Configuration R to

MOSTRAR MÁS

Otros transistores... AGM608C, AGM412D, AGM412MAP, AGM412MPA, AGM412S, AGM414MBP, AGM418M, AGM418MBP, IRF4905, AGM420MAP, AGM420MBA, AGM420MC, AGM420MD, AGM425M, AGM425MA, AGM425MC, AGM425MD