AGM420MA Datasheet. Specs and Replacement

Type Designator: AGM420MA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44.5 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: PDFN5X6

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AGM420MA datasheet

 ..1. Size:1752K  cn agmsemi
agm420ma.pdf pdf_icon

AGM420MA

AGM420MA P-Channel Typical Characteristics Typical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. -VGS(TH) Gate -Source Voltage Vs.Tj -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage ... See More ⇒

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agm420map.pdf pdf_icon

AGM420MA

AGM420MAP Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold V... See More ⇒

 7.1. Size:1567K  cn agmsemi
agm420md.pdf pdf_icon

AGM420MA

AGM420MD P-Channel Typical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. -VGS(TH) Gate -Source Voltage Vs.Tj -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source V... See More ⇒

 7.2. Size:1808K  cn agmsemi
agm420mc.pdf pdf_icon

AGM420MA

AGM420MC General Description Product Summary The AGM420MC combines advanced trench MOSFET technology with a low resistance to provide extremely low R . package DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 40V 18m 7.6A protection applications. -40V 26m -7.5A Features Advance high cell density Trench technology SOP8 Pin Configuration R to ... See More ⇒

Detailed specifications: AGM608C, AGM412D, AGM412MAP, AGM412MPA, AGM412S, AGM414MBP, AGM418M, AGM418MBP, IRF4905, AGM420MAP, AGM420MBA, AGM420MC, AGM420MD, AGM425M, AGM425MA, AGM425MC, AGM425MD

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