AGM55P10D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM55P10D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 71 nS

Cossⓘ - Capacitancia de salida: 106 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.071 Ohm

Encapsulados: TO252

  📄📄 Copiar 

 Búsqueda de reemplazo de AGM55P10D MOSFET

- Selecciónⓘ de transistores por parámetros

 

AGM55P10D datasheet

 ..1. Size:1137K  cn agmsemi
 agm55p10d.pdf pdf_icon

AGM55P10D

AGM55P10D General Description Product Summary The AGM55P10D combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -100V 52m -30A Features TO-252 Pin Configuration Advance high cell density Trench technology Low R to min

 6.1. Size:1318K  cn agmsemi
 agm55p10a.pdf pdf_icon

AGM55P10D

AGM55P10A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -100 -- -- V GS D Zero Gate Voltage Drain Current V =-100V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltag

 6.2. Size:831K  cn agmsemi
 agm55p10s.pdf pdf_icon

AGM55P10D

AGM55P10S General Description Product Summary The AGM55P10S combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -100V 65m -12A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minim

 9.1. Size:1448K  cn agmsemi
 agm55n15a.pdf pdf_icon

AGM55P10D

AGM55N15A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D DSS Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage

MOSTRAR MÁS

Otros transistores... AGM425MD, AGM425ME, AGM435E, AGM500P20D, AGM502, AGM55N15A, AGM55N15D, AGM55P10A, IRF530, AGM55P10S, AGM6014A, AGM6014AP, AGM6018A, AGM601LL, AP0903G, AP0903GD, AP1002