AGM55P10D - Даташиты. Аналоги. Основные параметры

AGM55P10D General DescriptionProduct SummaryThe AGM55P10D combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotectionapplications.-100V 52m -30A FeaturesTO-252 Pin Configuration Advance high cell density Trench technology Low R to min

AGM55P10ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -100 -- -- VGS DZero Gate Voltage Drain Current V =-100V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltag

AGM55P10S General DescriptionProduct SummaryThe AGM55P10S combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotectionapplications.-100V 65m -12A Features Advance high cell density Trench technologySOP8 Pin Configuration Low R to minim

AGM55N15ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 150 -- -- VGS DDSSZero Gate Voltage Drain Current V =150V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage

AGM55N15DTypical Electrical & Thermal Characteristics20 20VGS = 10VVDS = 5.0VVGS = 8.0VVGS = 7.0V1615 VGS = 6.0VTJ = 125C1210VGS = 5.5V8TJ = 25C5VGS = 5.0V4VGS = 4.6V0 00 0.5 1 1.5 2 2.5 3 02468VDS (V) VGS (V)Figure 1: Saturation Characteristics Figure 2: Transfer Characteristics80 2.5VGS = 10V70 2ID = 9.0A60 1.5VGS = 10V1500.5