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AGM6014A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGM6014A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 428 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: PDFN5X6
 

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AGM6014A Datasheet (PDF)

 ..1. Size:1254K  cn agmsemi
 agm6014a.pdf pdf_icon

AGM6014A

AGM6014ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,

 0.1. Size:1169K  cn agmsemi
 agm6014ap.pdf pdf_icon

AGM6014A

AGM6014AP General DescriptionThe AGM6014AP combines advanced trenchMOSFET technology with a low resistance package Product Summaryto provide extremely low R .DS(ON)device is idealThis for load switch and batteryprotection applications.BVDSS RDSON ID Features60V 4.3m 72AAdvance high cell density Trench technology Low R to minimize conductive lossDS(ON)

 8.1. Size:1276K  cn agmsemi
 agm6018a.pdf pdf_icon

AGM6014A

AGM6018ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,

 8.2. Size:934K  cn agmsemi
 agm601ll.pdf pdf_icon

AGM6014A

AGM601LLTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

MOSTRAR MÁS

Otros transistores... AGM435E , AGM500P20D , AGM502 , AGM55N15A , AGM55N15D , AGM55P10A , AGM55P10D , AGM55P10S , NCEP15T14 , AGM6014AP , AGM6018A , AGM601LL , , , , , .

History: AGM601LL

 

 
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