AGM6014A - аналоги, даташиты, параметры транзистора

AGM6014A Datasheet (PDF)

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AGM6014ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,

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AGM6014AP General DescriptionThe AGM6014AP combines advanced trenchMOSFET technology with a low resistance package Product Summaryto provide extremely low R .DS(ON)device is idealThis for load switch and batteryprotection applications.BVDSS RDSON ID Features60V 4.3m 72AAdvance high cell density Trench technology Low R to minimize conductive lossDS(ON)

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AGM6018ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,

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agm601ll.pdf pdf_icon

AGM601LLTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

Другие MOSFET... AGM435E , AGM500P20D , AGM502 , AGM55N15A , AGM55N15D , AGM55P10A , AGM55P10D , AGM55P10S , NCEP15T14 , AGM6014AP , AGM6018A , AGM601LL , , , , , .