AP120N03 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP120N03  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 108 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 393 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm

Encapsulados: TO220

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AP120N03 datasheet

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AP120N03

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AP120N03

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AP120N03

AP120N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP120N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R

 0.3. Size:1481K  cn apm
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AP120N03

AP120N03D 30V N-Channel Enhancement Mode MOSFET Description The AP120N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R

MOSTRAR MÁS

Otros transistores... AGM55P10S, AGM6014A, AGM6014AP, AGM6018A, AGM601LL, AP0903G, AP0903GD, AP1002, 4N60, AP120N04K, AP12N10S, AP1310, AP1310K, AP150N03G, AP150N03Q, AP15N10K, AP1605