AP120N04K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP120N04K  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 108 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 390 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm

Encapsulados: TO252

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AP120N04K datasheet

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AP120N04K

 6.1. Size:1486K  cn apm
 ap120n04d.pdf pdf_icon

AP120N04K

AP120N04D 40V N-Channel Enhancement Mode MOSFET Description The AP120N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R

 6.2. Size:1322K  cn apm
 ap120n04p ap120n04t.pdf pdf_icon

AP120N04K

AP120N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP120N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R

 6.3. Size:1545K  cn apm
 ap120n04t.pdf pdf_icon

AP120N04K

MOSTRAR MÁS

Otros transistores... AGM6014A, AGM6014AP, AGM6018A, AGM601LL, AP0903G, AP0903GD, AP1002, AP120N03, IRFP250, AP12N10S, AP1310, AP1310K, AP150N03G, AP150N03Q, AP15N10K, AP1605, AP1606