AP12N10S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP12N10S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 618 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: SOP8

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AP12N10S datasheet

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AP12N10S

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AP12N10S

AP12N10Y 100V N-Channel Enhancement Mode MOSFET Description The AP12N10Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12A DS D R

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 ap12n40f ap12n40p.pdf pdf_icon

AP12N10S

AP12N40FIP 400V N-Channel Enhancement Mode MOSFET Description The AP12N40F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

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 ap12n65f ap12n65p.pdf pdf_icon

AP12N10S

AP12N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP12N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

MOSTRAR MÁS

Otros transistores... AGM6014AP, AGM6018A, AGM601LL, AP0903G, AP0903GD, AP1002, AP120N03, AP120N04K, IRF1407, AP1310, AP1310K, AP150N03G, AP150N03Q, AP15N10K, AP1605, AP1606, AP180N03G