AP12N10S Datasheet. Specs and Replacement

Type Designator: AP12N10S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 618 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SOP8

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AP12N10S datasheet

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AP12N10S

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AP12N10S

AP12N10Y 100V N-Channel Enhancement Mode MOSFET Description The AP12N10Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12A DS D R ... See More ⇒

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AP12N10S

AP12N40FIP 400V N-Channel Enhancement Mode MOSFET Description The AP12N40F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. ... See More ⇒

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AP12N10S

AP12N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP12N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. ... See More ⇒

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Detailed specifications: AGM6014AP, AGM6018A, AGM601LL, AP0903G, AP0903GD, AP1002, AP120N03, AP120N04K, IRF1407, AP1310, AP1310K, AP150N03G, AP150N03Q, AP15N10K, AP1605, AP1606, AP180N03G

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