AP150N03Q Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP150N03Q  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 65 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm

Encapsulados: PDFN3.3X3.3-8L

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AP150N03Q datasheet

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AP150N03Q

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AP150N03Q

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AP150N03Q

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS D R

 6.3. Size:910K  cn apm
 ap150n03p ap150n03t.pdf pdf_icon

AP150N03Q

AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS D R

MOSTRAR MÁS

Otros transistores... AP0903GD, AP1002, AP120N03, AP120N04K, AP12N10S, AP1310, AP1310K, AP150N03G, RFP50N06, AP15N10K, AP1605, AP1606, AP180N03G, AP18P30Q, AP2003, AP200N04, AP200N04D