AP15N10K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP15N10K  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25.8 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: TO252

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AP15N10K datasheet

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 ap15n10k.pdf pdf_icon

AP15N10K

 7.1. Size:6508K  allpower
 ap15n10.pdf pdf_icon

AP15N10K

AP15N10 DATA SHEET DATA SHEET N-Channel Enhancement Mode Power MOSFET 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features Application 100V, 14.6A Synchronous buck converter applications. R =100m (max.) @ V = 10V, I = 5A DS(ON) GS D Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology RoHS Complia

 7.2. Size:2129K  cn apm
 ap15n10d-l.pdf pdf_icon

AP15N10K

AP15N10D-L 100V N-Channel Enhancement Mode MOSFET Description The AP15N10D-L uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =14.1A DS D R

 7.3. Size:1038K  cn apm
 ap15n10s.pdf pdf_icon

AP15N10K

AP15N10S 100V N-Channel Enhancement Mode MOSFET Description The AP15N10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =15A DS D R

MOSTRAR MÁS

Otros transistores... AP1002, AP120N03, AP120N04K, AP12N10S, AP1310, AP1310K, AP150N03G, AP150N03Q, SI2302, AP1605, AP1606, AP180N03G, AP18P30Q, AP2003, AP200N04, AP200N04D, AP2012