AP15N10K Datasheet: MOSFET, N-Ch, 100V, 14.6A. Full specification with pinout and replacement list

AP15N10K Datasheet. Specs and Replacement

Type Designator: AP15N10K 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25.8 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO252

📄📄 Copy

AP15N10K substitution

- MOSFET ⓘ Cross-Reference Search

AP15N10K datasheet

..1. Size:1728K allpower
ap15n10k.pdf pdf_icon

... See More ⇒

7.1. Size:6508K allpower
ap15n10.pdf pdf_icon

AP15N10 DATA SHEET DATA SHEET N-Channel Enhancement Mode Power MOSFET 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features Application 100V, 14.6A Synchronous buck converter applications. R =100m (max.) @ V = 10V, I = 5A DS(ON) GS D Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology RoHS Complia... See More ⇒

7.2. Size:2129K cn apm
ap15n10d-l.pdf pdf_icon

AP15N10D-L 100V N-Channel Enhancement Mode MOSFET Description The AP15N10D-L uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =14.1A DS D R ... See More ⇒

7.3. Size:1038K cn apm
ap15n10s.pdf pdf_icon

AP15N10S 100V N-Channel Enhancement Mode MOSFET Description The AP15N10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =15A DS D R ... See More ⇒