AP1605 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP1605 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.9 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 12 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
Encapsulados: DFN1.0X0.6
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AP1605 datasheet
ap1605.pdf
All Power Semiconductor Co.,Ltd V1.0 1 All Power Semiconductor Co.,Ltd V1.0 2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 2 -8V -3V VDS=-5V -2.5V -4V 1.5 1.5 -4.5V 1 1 -2.0V 125 C 0.5 0.5 25 C VGS=-1.5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 1 2 3 4 5 -VGS(Volts) -VDS (Volts) Figure 2 Transfer Characteristics (Note E) Fig 1 On-Region Charac
ap160n08p ap160n08t.pdf
AP160N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP160N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =160A DS D R
ap160n10p ap160n10t.pdf
AP160N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP160N10P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =100V I =160A DS D R
Otros transistores... AP120N03, AP120N04K, AP12N10S, AP1310, AP1310K, AP150N03G, AP150N03Q, AP15N10K, AO3407, AP1606, AP180N03G, AP18P30Q, AP2003, AP200N04, AP200N04D, AP2012, AP2012S
History: AP04N70BI-HF
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