All MOSFET. AP1605 Datasheet

 

AP1605 Datasheet and Replacement


   Type Designator: AP1605
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
   Package: DFN1.0X0.6
 

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AP1605 Datasheet (PDF)

 9.1. Size:1760K  cn apm
ap160n08p ap160n08t.pdf pdf_icon

AP1605

AP160N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP160N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =160A DS DR

 9.2. Size:1580K  cn apm
ap160n10p ap160n10t.pdf pdf_icon

AP1605

AP160N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP160N10P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =100V I =160A DS DR

 9.3. Size:1553K  cn apm
ap160n04p ap160n04t.pdf pdf_icon

AP1605

AP160N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP160N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =160 A DS DR

Datasheet: AP120N03 , AP120N04K , AP12N10S , AP1310 , AP1310K , AP150N03G , AP150N03Q , AP15N10K , AO3407 , AP1606 , AP180N03G , AP18P30Q , , , , , .

History: AP180N03G | AP15N10K | AP18P30Q | AP150N03G | AP150N03Q

Keywords - AP1605 MOSFET datasheet

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