AP1606 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP1606 Datasheet (PDF)

9.1. Size:1760K cn apm
ap160n08p ap160n08t.pdf pdf_icon

AP160N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP160N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =160A DS DR

9.2. Size:1580K cn apm
ap160n10p ap160n10t.pdf pdf_icon

AP160N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP160N10P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =100V I =160A DS DR

9.3. Size:1553K cn apm
ap160n04p ap160n04t.pdf pdf_icon

AP160N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP160N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =160 A DS DR

Otros transistores... AP120N04K , AP12N10S , AP1310 , AP1310K , AP150N03G , AP150N03Q , AP15N10K , AP1605 , 18N50 , AP180N03G , AP18P30Q , , , , , , .