AP1606 Datasheet. Specs and Replacement

Type Designator: AP1606  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: DFN1.0X0.6

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AP1606 datasheet

 ..1. Size:1320K  allpower
 ap1606.pdf pdf_icon

AP1606

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AP1606

All Power Semiconductor Co.,Ltd V1.0 1 All Power Semiconductor Co.,Ltd V1.0 2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 2 -8V -3V VDS=-5V -2.5V -4V 1.5 1.5 -4.5V 1 1 -2.0V 125 C 0.5 0.5 25 C VGS=-1.5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 1 2 3 4 5 -VGS(Volts) -VDS (Volts) Figure 2 Transfer Characteristics (Note E) Fig 1 On-Region Charac... See More ⇒

 9.2. Size:1760K  cn apm
 ap160n08p ap160n08t.pdf pdf_icon

AP1606

AP160N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP160N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =160A DS D R ... See More ⇒

 9.3. Size:1580K  cn apm
 ap160n10p ap160n10t.pdf pdf_icon

AP1606

AP160N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP160N10P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =100V I =160A DS D R ... See More ⇒

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Detailed specifications: AP120N04K, AP12N10S, AP1310, AP1310K, AP150N03G, AP150N03Q, AP15N10K, AP1605, 18N50, AP180N03G, AP18P30Q, AP2003, AP200N04, AP200N04D, AP2012, AP2012S, AP2022S

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