AP180N03G Todos los transistores

 

AP180N03G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP180N03G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 720 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
   Paquete / Cubierta: PDFN5X6
 

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AP180N03G Datasheet (PDF)

 6.1. Size:1530K  cn apm
 ap180n03d.pdf pdf_icon

AP180N03G

AP180N03D 30V N-Channel Enhancement Mode MOSFET Description The AP180N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =180A DS DR

 6.2. Size:1647K  cn apm
 ap180n03p ap180n03t.pdf pdf_icon

AP180N03G

AP180N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP180N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =180 A DS DR

 7.1. Size:1493K  cn apm
 ap180n04nf.pdf pdf_icon

AP180N03G

AP180N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP180N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =180A DS DR

 7.2. Size:1759K  cn apm
 ap180n08p ap180n08t.pdf pdf_icon

AP180N03G

AP180N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP180N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =180A DS DR

MOSTRAR MÁS

Otros transistores... AP12N10S , AP1310 , AP1310K , AP150N03G , AP150N03Q , AP15N10K , AP1605 , AP1606 , 20N50 , AP18P30Q , , , , , , , .

History: AP150N03Q

 

 
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