AP180N03G Datasheet. Specs and Replacement

Type Designator: AP180N03G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: PDFN5X6

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AP180N03G datasheet

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AP180N03G

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AP180N03G

AP180N03D 30V N-Channel Enhancement Mode MOSFET Description The AP180N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =180A DS D R ... See More ⇒

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AP180N03G

AP180N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP180N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =180 A DS D R ... See More ⇒

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AP180N03G

AP180N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP180N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =180A DS D R ... See More ⇒

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Detailed specifications: AP12N10S, AP1310, AP1310K, AP150N03G, AP150N03Q, AP15N10K, AP1605, AP1606, 20N50, AP18P30Q, AP2003, AP200N04, AP200N04D, AP2012, AP2012S, AP2022S, AP2035G

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