ZXMN6A08G Todos los transistores

 

ZXMN6A08G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN6A08G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.3 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 459 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: SOT223
     - Selección de transistores por parámetros

 

ZXMN6A08G Datasheet (PDF)

 ..1. Size:446K  diodes
zxmn6a08g.pdf pdf_icon

ZXMN6A08G

ZXMN6A08G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.080 @ VGS = 10V5.3600.150 @ VGS = 4.5V2.8DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resi

 0.1. Size:444K  zetex
zxmn6a08gta.pdf pdf_icon

ZXMN6A08G

ZXMN6A08G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.080 @ VGS = 10V5.3600.150 @ VGS = 4.5V2.8DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resi

 6.1. Size:660K  diodes
zxmn6a08k.pdf pdf_icon

ZXMN6A08G

A Product Line ofDiodes IncorporatedZXMN6A08K60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 80m @ VGS= 10V 7.90A 60V 150m @ VGS= 4.5V 5.75A Mech

 6.2. Size:657K  diodes
zxmn6a08ktc.pdf pdf_icon

ZXMN6A08G

A Product Line ofDiodes IncorporatedZXMN6A08K60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 80m @ VGS= 10V 7.90A 60V 150m @ VGS= 4.5V 5.75A Mech

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History: BLF6G27-100 | SMC3407 | FMP30N60S1 | HCFL60R190

 

 
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